THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A 3D semiconductor device and a manufacturing method thereof are provided to reduce a leakage current by decoupling a common source line from a substrate through a buried insulating layer. CONSTITUTION: A buffer layer(4) is formed on a substrate. The buffer layer comprises a buried insulation layer and a semiconductor layer. The semiconductor layer is formed on the buried insulation layer. A common source line is located inside the semiconductor layer. A plurality of conductive patterns is laminated on the buffer layer. Inter-layer insulation patterns(21a-28a) are arranged between the conductive patterns. Activity patterns contact with the buffer layer by passing through the plurality of conductive patterns and the inter-layer insulation patterns.