NITRIDE BASED LIGHT EMITTING DIODE WITH EXCELLENT CURRENT SPREADING EFFECT AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor light emitting device with a high current diffusion effect and a manufacturing method thereof are provided to increase luminous efficiency by using a current diffusion unit to improve current diffusion. CONSTITUTION: A buffer layer(120) is formed on a substrate(110). An n type nitride layer(130) is formed on the buffer layer. A current diffusion layer(140) is formed on the n type nitride layer. An active layer(150) is formed on the current diffusion layer. A p type nitride layer(160) is formed on the active layer.