发明名称 |
METHOD FOR FORMING NITRIDE THIN FILM ON M-PLANE SAPPHIRE SUBSTRATE AND NITRIDE SEMICONDUCTOR MANUFACTURED BY THE SAME |
摘要 |
PURPOSE: A method for forming a nitride thin film on an m-surface sapphire substrate and the nitride semiconductor manufactured thereby are provided to increase photoluminescence intensity by epitaxially re-growing an etching surface after a heat etching process. CONSTITUTION: An M-surface sapphire substrate(10) is nitrified. A nitride thin film(32) is formed by epitaxially growing the nitrified M-surface sapphire substrate with nitride materials under a high temperature hydrogen atmosphere. The M-surface sapphire substrate is nitrified within an MOCVD(Metalorganic Chemical Vapor Deposition) chamber in an atmosphere including hydrogen gas and ammonia gas for over 5 minutes. The growth temperature for the nitrified M-surface sapphire substrate is 1030°C. The nitride materials include GaN(Gallium Nitride).
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申请公布号 |
KR20120090189(A) |
申请公布日期 |
2012.08.17 |
申请号 |
KR20110010469 |
申请日期 |
2011.02.07 |
申请人 |
KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION |
发明人 |
LEE, SUNG NAM;SHIN, SU JIN;OH, DONG SUB |
分类号 |
H01L33/16;H01L21/20 |
主分类号 |
H01L33/16 |
代理机构 |
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地址 |
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