| 摘要 |
<p>PURPOSE: A radiation-sensitive resin composition for forming resist patterns is provided to improve exposure latitude, depth of focus, critical dimension uniformity, and mask error enhancement factor. CONSTITUTION: A radiation-sensitive resin composition for forming resist patterns includes a polymer with an acid-labile group and a radiation-sensitive acid generating member. The composition uses a developing solution containing 80 mass% or more of an organic solvent. A contrast value derived from a resist sensitivity curve is in a range between 5.0 and 30.0 if the organic solvent is used for a developing process. The organic solvent is at least one selected from a group including C3-7 carboxylic acid alkyl ester and C3-10 dialkylketon. The polymer includes structural units represented by chemical formulas 1 and 2.</p> |
