发明名称 THIN FILM DEPOSITION METHOD
摘要 The subject of the invention is a process for obtaining a substrate coated on at least part of its surface with at least one film of oxide of a metal M the physical thickness of which is 30 nm or less, said oxide film not being part of a multilayer comprising at least one silver film, said process comprising the following steps: at least one intermediate film of a material chosen from the metal M, a nitride of the metal M, a carbide of the metal M and an oxygen-substoichiometric oxide of the metal M is deposited by sputtering, said intermediate film not being deposited above or beneath a titanium-oxide-based film, the physical thickness of said intermediate film being 30 nm or less; and at least part of the surface of said intermediate film is oxidized using a heat treatment, during which said intermediate film is in direct contact with an oxidizing atmosphere, especially air, the temperature of said substrate during said heat treatment not exceeding 150° C.
申请公布号 KR20120091043(A) 申请公布日期 2012.08.17
申请号 KR20127008329 申请日期 2010.09.30
申请人 SAINT-GOBAIN GLASS FRANCE 发明人 KHARCHENKO ANDRIY;DURANDEAU ANNE;NADAUD NICOLAS
分类号 C03C17/00;C03C17/245;C23C14/58 主分类号 C03C17/00
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