发明名称 |
SEMICONDUCTOR CIRCUIT HAVING FUNCTION OF POWER GATING AND SEMICONDUCTOR DEVICE INCLUDING THE SAME |
摘要 |
PURPOSE: A power gating semiconductor circuit and a semiconductor device including the same are provided to reduce a gate leakage current by applying a low gate voltage to a gate of a transistor which is turned on. CONSTITUTION: A logic unit(200) maintains an output signal with a standby logic level in a standby mode. A power gating unit(100) applies a power voltage to the logic unit in a driving mode based on a standby mode enable signal. The power gating unit partially applies a standby mode power voltage which is lower than the power voltage in the standby mode to a logic level maintaining area of the logic unit which is activated to maintain a standby logic level.
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申请公布号 |
KR20120090513(A) |
申请公布日期 |
2012.08.17 |
申请号 |
KR20110010983 |
申请日期 |
2011.02.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JUNG SIK |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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