发明名称 SEMICONDUCTOR CIRCUIT HAVING FUNCTION OF POWER GATING AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要 PURPOSE: A power gating semiconductor circuit and a semiconductor device including the same are provided to reduce a gate leakage current by applying a low gate voltage to a gate of a transistor which is turned on. CONSTITUTION: A logic unit(200) maintains an output signal with a standby logic level in a standby mode. A power gating unit(100) applies a power voltage to the logic unit in a driving mode based on a standby mode enable signal. The power gating unit partially applies a standby mode power voltage which is lower than the power voltage in the standby mode to a logic level maintaining area of the logic unit which is activated to maintain a standby logic level.
申请公布号 KR20120090513(A) 申请公布日期 2012.08.17
申请号 KR20110010983 申请日期 2011.02.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JUNG SIK
分类号 G11C5/14 主分类号 G11C5/14
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