| 摘要 |
#CMT# #/CMT# Composition (I) comprises: copper ions having a concentration of 45-1500 mM; a copper complexing agent containing at least one compound comprising aliphatic polyamines having 2-4 amino groups, preferably ethylenediamine, having a concentration of 45-3000 mM; thiodiglycolic acid having a concentration of 1-500 mg/l; and optionally a buffer system, preferably ammonium sulfate having a concentration of 0.1-3 M, where the molar ratio of copper and the complexing agent is 0.1-5. #CMT# : #/CMT# An independent claim is included for process for filling semiconductor substrate cavity, preferably through via type structure for preparing interconnections in integrated circuits in three dimensions, the cavity being covered with a layer of copper diffusion barriers, preferably nickel-based, optionally covered with a copper germination layer comprises contacting the surface of the cavity with a electroplating composition and polarizing the surface for a time sufficient to allow filling the cavity. #CMT#USE : #/CMT# (I) is useful for filling, by copper electroplating, semiconductor substrate cavity such as through via type structure for preparing interconnections in integrated circuits in three dimensions (claimed), preferably printed circuit board or printed wire board or for preparing passive elements such as inductance or electromechanic in the integrated circuits or microsystem (micro electro mechanical systems). #CMT#ADVANTAGE : #/CMT# (I): does not generate contaminants, preferably carbon, chlorine and sulfur in significant quantities; is low aggressive against germination layer and barrier layer; and has good electrical conductivity. #CMT#INORGANIC CHEMISTRY : #/CMT# Preferred Components: The concentration of copper ion is 45-500 mM, preferably 100-300 mM. The copper ions are preferably copper sulfate. The copper complexing agent is at least one compound comprising ethylenediamine (preferred), diethylenetriamine, triethylenetetramine or dipropylenetriamine. The concentration of the copper complexing agent is 45-1500 mM, preferably 300-900 mM. The molar ratio of copper complexing agent is 0.1-1, preferably 0.2-0.4. The surface of the cavity to be filled is: constituted of copper diffusion barrier forming material comprising at least one material containing tantalum, titanium, tantalum nitride, titanium nitride, tungsten, tungsten titanate and nitride or carbide of tungsten; and constituted of copper diffusion barrier forming material made of nickel. Preferred Process: The polarization is carried out in continuous mode by applying a current per unit area of 0.2-50 mA/cm 2>, preferably 0.5-5 mA/cm 2>. The step of contacting is carried out at cold inlet. The filling of the cavity is carried out at a temperature of 20-30[deg] C. #CMT#EXAMPLE : #/CMT# No suitable example given. |
