THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要
<p>PURPOSE: A thin film transistor display panel and a manufacturing method thereof are provided to reduce manufacturing costs by forming a gate electric conductor and a reference electrode at the same time. CONSTITUTION: A gate electric conductor and a first electrode layer are formed on a substrate at the same time. A gate insulating layer(140) is formed on the gate electric conductor and the first electrode layer. A semiconductor, a source electrode, and a drain electrode are formed on the gate insulating layer. A protective film(180) is formed on the semiconductor, the source electrode, and the drain electrode. A second electrode layer is formed on the protective film. A channel of a thin film transistor is formed in the semiconductor between the source electrode and the drain electrode.</p>
申请公布号
KR20120090368(A)
申请公布日期
2012.08.17
申请号
KR20110010745
申请日期
2011.02.07
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
WOO, DONG WON;PARK, JEONG MIN;PARK, JE HYEONG;KIM, SANG GAB;LEE, JUNG SOO;KIM, JI HYUN