THE METHOD OF SILICON NANOWIRE COATED WITH ZINC OXIDE FILM AND SILICON NANOWIRE COATED WITH ZINC OXIDE FILM PREPARED THEREBY

摘要

PURPOSE: A manufacturing method of silicon nanowire in which zinc oxide film is coated and a ZNO layer coated silicon nano wire manufactured by the method are provided to improve light emission properties of the silicon nanowire. CONSTITUTION: A manufacturing method of silicon nanowire in which zinc oxide film is coated comprises the following steps: forming silicon nano wires on a silicon substrate using a non-electrolytic etching process; and coating zinc oxide(ZnO) on the silicon nano wires; and heat treating the ZNO coated silicon nano wires. The non-electrolytic etching process uses silver (Ag) dipped in the nitric acid. The zinc oxide coating is a sol-gel method, heating, a solution method, a chemistry gaseity deposition method, a method for atomic layer deposition and a sputtering method. The thermal process is processed at 400-700 deg. Celsius under a N2/3 mol% H2 reducing atmosphere or an oxygen atmosphere. The thickness of the ZNO layer is 2-10 nano meters.