SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent contact failure between a penetrating electrode and a top wire by executing a BEOL(Back End Of Line) process after forming the penetrating electrode on a substrate. CONSTITUTION: Circuit patterns are formed on a substrate. An inter-layer insulating film(14) covers the circuit patterns. A first inter-metal insulating film(30) is located on the inter-layer insulating film. A second inter-metal insulating film(40) is located on the first inter-metal insulating film. The second inter-metal insulating film comprises a second top contact(44) and a second top wire(52). The second top contact is electrically connected to a first top contact. The second top wire is electrically connected to a first top wire and has one or more conductive lines.