发明名称 |
HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE |
摘要 |
A memory device includes a first metal layer and a first metal oxide layer coupled to the first metal layer. The memory device includes a second metal oxide layer coupled to the first metal oxide layer and a second metal layer coupled to the second metal oxide layer. The formation of the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer
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申请公布号 |
US2012205611(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201213456378 |
申请日期 |
2012.04.26 |
申请人 |
CHEN DONGMIN;4D-S PTY, LTD |
发明人 |
CHEN DONGMIN |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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