发明名称 SEMICONDUCTOR STRUCTURE AND METHODS OF MANUFACTURE
摘要 FinFET end-implanted-semiconductor structures and methods of manufacture are disclosed herein. The method includes forming at least one mandrel (14 in Fig. 5) on a silicon layer of a substrate (18') comprising an underlying insulator layer (10b). The method further includes etching the silicon layer to form at least one silicon island (18') under the at least one mandrel. The method further comprises ion- implanting sidewalls of the at least one silicon island to form doped regions (20) on the sidewalls. The method further includes forming a dielectric layer on the substrate, a top surface of which is planarized to be coplanar with a top surface of the at least one mandrel (14). The method further includes removing the at least one mandrel (14) to form an opening in the dielectric layer. The method further comprises etching the at least one silicon island to form at least one fin island having doped source and drain regions.
申请公布号 WO2012054144(A3) 申请公布日期 2012.08.16
申请号 WO2011US50502 申请日期 2011.09.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;ANDERSON, BRENT, A.;NOWAK, EDWARD, J. 发明人 ANDERSON, BRENT, A.;NOWAK, EDWARD, J.
分类号 H01L29/66;H01L29/78 主分类号 H01L29/66
代理机构 代理人
主权项
地址