发明名称 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN
摘要 PURPOSE: A resist composition and a method for forming resist patterns using the same are provided to alleviate mask error factors in addition to improve the shape of resist patterns. CONSTITUTION: A resist composition includes a base component, an acid generator component, and a nitrogen-containing organic compound. The dissolution of the base component to a developing solution is changed by the action of acid. The acid generator compound generates acid by exposure. The acid generator component contains an acid generator composed of a compound represented by chemical formula 1. The nitrogen-containing organic compound contains a compound represented by chemical formula 2. In chemical formula 1, Y0 is a C1 to C4 alkylene group with/without a substituted group; R0 is an alkyl group, an alkoxy group, a halogen element, a halogenated alkyl group, a hydroxyl group, or an oxygen element; p is 0 or 1; and Z+ is an organic cation. In chemical formula 2, R60 is a linear, branched, or cyclic aliphatic hydrocarbon group with/without a substituted group; Y 1 is a divalent linear, branched, or cyclic aliphatic hydrocarbon group; R61 is a hydrogen element, a fluorine element, an alkyl group, or a fluorinated alkyl group; q is the integer of 1 to 10; and A+ is an organic cation.
申请公布号 KR20120089995(A) 申请公布日期 2012.08.16
申请号 KR20110137080 申请日期 2011.12.19
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 KUROSAWA TSUYOSHI;ENDO KOTARO;SUZUKI YUICHI;IWASAWA YUTA
分类号 G03F7/004;G03F7/038;G03F7/039;H01L21/027 主分类号 G03F7/004
代理机构 代理人
主权项
地址