| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a data programming method and a semiconductor system which can increase reliability of data programming operations even if charge loss occurs. <P>SOLUTION: A data programming method includes: a step (S100) of determining whether threshold voltage distribution of a plurality of memory cells, where a first bit value of writing data was programmed, has deviated from a targeted first voltage range, a step (S200) of correcting the first bit value through an error correction code if the threshold voltage distribution of the plurality of memory cells has deviated from the first voltage range, and a step (S400) of programming the corrected first bit value and a second bit value of the writing data to the plurality of memory cells. <P>COPYRIGHT: (C)2012,JPO&INPIT |
