| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer which is improved from a standpoint of forming a crack well when a wafer is separated. <P>SOLUTION: By using an epitaxial growth layer of a semiconductor wafer, a plurality of optical semiconductor elements (more specifically, semiconductor lasers) are formed side by side in a surface direction of the semiconductor wafer. An InGaAs epitaxial layer is provided continuously between the optical semiconductor elements, and a part (more specifically, an aperture or a groove) for exposing a layer underlying the InGaAs epitaxial layer at least to a layer overlying the InGaAs epitaxial layer is provided. A vertically progressing crack can be formed by scribing this part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
