发明名称 POWER SEMICONDUCTOR MODULE
摘要 A power semiconductor module (100) is provided with: electrode plates (2) having an integrated body (2a) and an external connection terminal (2b), the bodies (2a) being in a coplanar arrangement; a semiconductor element (1) carried on one surface (carrying surface) (2c) of the body (2a); and a resin package (3) in which the other surface (radiating surface) (2d) of the body (2a) is exposed, and the semiconductor element (1) and the body (2a) of the electrode plates (2) are sealed using a resin. The radiating surface (2d) and a bottom surface (3a) of the resin package (3) are coplanar. It is thereby possible to improve heat-radiating performance and reliability as well as to reduce size.
申请公布号 WO2012108011(A1) 申请公布日期 2012.08.16
申请号 WO2011JP52742 申请日期 2011.02.09
申请人 MITSUBISHI ELECTRIC CORPORATION;ASADA SHINSUKE;NAGAO KENJIRO;NAKAJIMA DAI;WATANABE YUETSU;ASAO YOSHIHITO;OGA TAKUYA;KATO MASAKI 发明人 ASADA SHINSUKE;NAGAO KENJIRO;NAKAJIMA DAI;WATANABE YUETSU;ASAO YOSHIHITO;OGA TAKUYA;KATO MASAKI
分类号 H01L23/48;H01L23/28;H01L25/07;H01L25/18 主分类号 H01L23/48
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