| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable forming of a homogeneous insulating film at high speed onto a semiconductor substrate with a simple technique. <P>SOLUTION: The insulating film forming apparatus 1 irradiates a substrate 70 with atomic beam of hafnium metal from an electron beam evaporation source 12 of a deposition portion 10 to allow hafnium fine particles 73 in a liquid state to be deposited on a silicone oxide film 72 of the substrate 70 to cause a deposition state, and irradiates the substrate 70 with active particles 74 composed of nitrogen atoms, active nitrogen molecules and nitrogen ions from a plasma source 22 of an irradiation section 20 to form nitrided hafnium silicate film 76 on the surface while changing the silicone oxide film 72 into a silicon oxynitride film 75 to put the substrate 70 in a film-formed state. Thus, the insulating film forming apparatus 1 can easily form, in short time, the nitrided hafnium silicate film 76 which can function as high dielectric constant gate insulating film by performing the deposition treatment of the hafnium fine particles 73 onto the substrate 70 and the irradiation treatment with the active particles 74 composed of nitrogen plasma onto the substrate 70. <P>COPYRIGHT: (C)2012,JPO&INPIT |
