发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method therefor, capable of reducing the area of an electrode pad portion while securing stable electrical contact of the electrode pad portion. <P>SOLUTION: The semiconductor device includes: a semiconductor substrate; and on the principal surface of the semiconductor substrate, a semiconductor chip electrode pad portion and a TEG electrode pad portion PT at least formed in either one of an element formation region and a dicing line region in a plan view. The semiconductor chip electrode pad portion and the TEG electrode pad portion PT include a surface OSF for electrically connecting to the outside, and also include a groove portion THP extending in an oblique direction to a side SID of the semiconductor chip electrode pad portion and the TEG electrode pad portion PT. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012156183(A) 申请公布日期 2012.08.16
申请号 JP20110011865 申请日期 2011.01.24
申请人 RENESAS ELECTRONICS CORP 发明人 YASUMA MASATOSHI;OKADA YOSHINORI
分类号 H01L21/66;H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L21/66
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