| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for polishing a semiconductor wafer which is less likely to cause haze and pits, especially the "remaining abrasive", in the plane of a wafer when the plane and the edge portion of a device wafer, or the like, are polished. <P>SOLUTION: In the composition for polishing a semiconductor wafer containing colloidal silica produced from an active silicic acid, as a raw material, under existence of potassium ions, the colloidal silica contains potassium ions and aspherical heteromorphic silica particle group having a ratio of the long diameter/short diameter in the range of 1.2-10 observed by a transmission electron microscope. Mirror polishing of the plane and the edge portion of a semiconductor wafer can be carried out effectively by using the composition for polishing a semiconductor wafer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
