| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a simple structure in which the breakdown voltage can be enhanced in the whole outer peripheral region by enhancing the breakdown voltage in the corner area of a cell region. <P>SOLUTION: The semiconductor device 1 has a cell region 2 in which a semiconductor element 6 is formed, and an outer peripheral region 3 formed on the outer periphery of the cell region 2. The number of p-type field relaxation regions 24n arranged in the corner area of the cell region 2 from the inside toward the outside of the outer peripheral region 3 is set larger than the number of the p-type field relaxation regions 24n arranged along each side of the cell region 2 from the inside toward the outside of the outer peripheral region 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
