| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element capable of preventing variation in luminous efficiency even in using a substrate having variation in an off-angle of a primary surface at the center and the periphery of a wafer. <P>SOLUTION: A blue-violet semiconductor laser element 100 (a nitride semiconductor laser element) comprises an n-type GaN substrate 1 and a semiconductor element layer 10 that has an active layer 13 and is formed on a primary surface 1a of the N-type GaN substrate 1. The semiconductor element layer 10 includes an element layer region 10a having a primary surface (such as a primary surface 11c of a buffer layer 11) in which a crystal growth surface substantially does not have an off-angle in the direction along an a-axis direction ([11-20] direction), and an element layer region 10b having a primary surface (such as a primary surface 11d) in which the crystal growth surface has the off-angle in the direction along the [11-20] direction. A ridge portion 3 is formed in the element layer region 10a of the semiconductor element layer 10. <P>COPYRIGHT: (C)2012,JPO&INPIT |
