SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To improve flatness of a surface of a semiconductor substrate without causing the increase of a chip area due to the disposition of a dummy active region.

SOLUTION: A gate insulator 7 of a high breakdown voltage MISFET having a thick film thickness is formed at an upper part of an n-type buried layer 3 serving as a dummy active region, and a resistance element IR of an internal circuit is formed at an upper part of the gate insulator 7. Disposing the thick gate insulator 7 between the n-type buried layer 3 and the resistance element IR reduces coupling capacitance formed between a substrate 1 (the n-type buried layer 3) and the resistance element IR.

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