| 发明名称 |
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
| 摘要 |
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (11 02) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
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| 申请公布号 |
US2012205623(A1) |
申请公布日期 |
2012.08.16 |
| 申请号 |
US201213457032 |
申请日期 |
2012.04.26 |
| 申请人 |
CRAVEN MICHAEL D.;KELLER STACIA;DENBAARS STEVEN P.;MARGALITH TAL;SPECK JAMES STEPHEN;NAKAMURA SHUJI;MISHRA UMESH K.;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
CRAVEN MICHAEL D.;KELLER STACIA;DENBAARS STEVEN P.;MARGALITH TAL;SPECK JAMES STEPHEN;NAKAMURA SHUJI;MISHRA UMESH K. |
| 分类号 |
H01L33/06;C23C16/04;C30B25/02;C30B25/04;C30B25/10;C30B25/18;C30B29/38;C30B29/40;C30B29/60;H01L21/205;H01L29/201;H01L33/00;H01L33/32;H01S5/343 |
主分类号 |
H01L33/06 |
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