| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce conduction loss of a circuit while reducing noise in an existing conversion circuit. <P>SOLUTION: A circuit device has SiC-MOSFETs and free-wheel diodes each parallelly connected to each SiC-MOSFET. Each free-wheel diode is configured by connecting, in parallel, a Schottky barrier diode and a silicon PiN diode that are composed of a semiconductor material having a larger band gap than silicon as a base material. The Schottky barrier diode and the silicon PiN diode are individual chips. <P>COPYRIGHT: (C)2012,JPO&INPIT |
