发明名称 SEMICONDUCTOR MODULE
摘要 A PFC module includes: a diode bridge having first and second diodes in the upper arm, and third and fourth diodes in the lower arm; and first and second switching elements for power factor correction. The first and second diodes are Schottky barrier diodes formed by using a wide bandgap semiconductor. The third and fourth diodes, and the first and second switching elements are Schottky barrier diodes and switching elements respectively formed by using silicon.
申请公布号 US2012206196(A1) 申请公布日期 2012.08.16
申请号 US201113298711 申请日期 2011.11.17
申请人 KATO MASAHIRO;NAKAGAWA SHINYA;MITSUBISHI ELECTRIC CORPORATION 发明人 KATO MASAHIRO;NAKAGAWA SHINYA
分类号 H01L27/06 主分类号 H01L27/06
代理机构 代理人
主权项
地址
您可能感兴趣的专利