SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide semiconductor device has a trench gate switching element including: a substrate (1), a drift layer (2) and a base region (3) stacked in this order; a source region (4) and a contact region (5) in upper portions of the base region (3); a trench (6) extending from the source region (4) to penetrate the base region (3); a gate electrode (9) on a gate insulating film (8) in the trench (6); a source electrode (11) coupled with the source region (4) and the base region (3); a drain electrode (13) on a back of the substrate (1); and multiple deep layers (10) in an upper portion of the drift layer (2) disposed deeper than the trench (6) and extending in a direction, which crosses the longitudinal direction of the trench. A whole of or a part of one of the deep layers (10) is spaced apart from the trench (6).