| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in device properties and a method of manufacturing the same. <P>SOLUTION: A semiconductor device according to an embodiment comprises a function film including a first region and a second region, a first groove provided in the first region of the substrate and having a first width, a second groove provided in the second region of the substrate and having a second width greater than the first width, a first insulating film formed so as to fill the first groove using a high-polymer material as a precursor, fine particles each having a diameter greater than the first width and configured to fill the second groove, and a second insulating film formed so as to fill a gap between the fine particles in the second groove and a gap between the fine particles and the second groove using the high-polymer material as a precursor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
