| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and/or architecture for a random access memory device generally and, more particularly, to provide a synchronous random access memory device having a burst transfer capability. <P>SOLUTION: A device generally comprises a memory array and a burst sequence generator. The memory array may be configured to store data. The burst sequence generator may be configured to generate a burst sequence in response to address information received by the device. The burst sequence may be configured to identify a plurality of locations for storing data in the memory array. The device may have a maximum operating current of 50 milliamperes and/or a maximum standby current of about 25 microamperes. <P>COPYRIGHT: (C)2012,JPO&INPIT |
