发明名称 |
Magnetic element with improved out-of-plane anisotropy for spintronic applications |
摘要 |
A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co20Fe60B20. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.
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申请公布号 |
US2012205758(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US20110931866 |
申请日期 |
2011.02.11 |
申请人 |
JAN GUENOLE;TONG RU YING;KULA WITOLD;HORNG CHENG;MAGIC TECHNOLOGIES, INC. |
发明人 |
JAN GUENOLE;TONG RU YING;KULA WITOLD;HORNG CHENG |
分类号 |
H01L29/82;H01L21/8246 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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