| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SOI substrate having a semiconductor layer with uniform thickness. <P>SOLUTION: A manufacturing method of an SOI substrate including a semiconductor layer on a base substrate includes: polishing a first surface of a semiconductor substrate to flatten the first surface; irradiating a second surface, which is opposite to the first surface of the semiconductor substrate, with ions to form an embrittled region in the semiconductor substrate; disposing the semiconductor substrate and the base substrate so that the second surface of the semiconductor substrate and a surface of the base substrate face each other and are in contact with each other, thereby attaching the semiconductor substrate and the base substrate to each other; and heating the attached semiconductor substrate and base substrate to separate the substrates at the embrittled region. In the manufacture of the SOI substrate, the standard deviation of the film thickness of the semiconductor layer is σ and 3σ is 1.5 nm or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
