发明名称 |
3-D STRUCTURED NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A non-volatile memory device includes channel structures that each extend in a first direction, wherein the channel structures each include channel layers and interlayer dielectric layers that are alternately stacked; source structure extending in a second direction crossing the first direction and connected to ends of the channel structures, wherein the source structure includes source lines and interlayer dielectric layers that are alternately stacked; and word lines extending in the second direction and formed to surround the channel structures.
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申请公布号 |
US2012206979(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201213397024 |
申请日期 |
2012.02.15 |
申请人 |
SHIN HACK SEOB;OH SANG HYUN |
发明人 |
SHIN HACK SEOB;OH SANG HYUN |
分类号 |
G11C16/04;H01L21/336;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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