| 摘要 |
Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer.
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