| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having excellent electrical characteristics and reliability, and to provide a method of manufacturing the same. <P>SOLUTION: The nonvolatile semiconductor memory device comprises a semiconductor substrate, an element isolation insulator film filling an element isolation groove formed in the semiconductor substrate, multiple memory cells spaced apart at predetermined intervals by the element isolation grooves and having a laminate structure where a first insulator film and a charge storage film are laminated sequentially on the semiconductor substrate, a second insulator film formed on the charge storage film and the element isolation insulator film, and a control electrode film formed on the second insulator film. Upper surface of the element isolation insulator film is lower than the upper surface of the charge storage film, the second insulator film includes a cell upper part on the charge storage film and an inter-cell part on the element isolation insulator film, and the permittivity of the cell upper part is lower than the permittivity of the inter-cell part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
