| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the shape of wiring lines can be easily controlled and a step on a surface of an insulating film filling a gap between wiring lines can be avoided, and to provide a method of manufacturing the same. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming grooves in wiring regions in a first insulating film having the wiring regions and a non-wiring region; depositing a wiring material so as to cover the top surface of the first insulating film and the bottom surfaces and the sidewalls of the grooves; forming a plurality of wiring lines in the grooves, parallel to the grooves and spaced apart from the sidewalls, by etching the wiring material; and forming a second insulating film so as to cover the top surfaces of the first insulating film and the plurality of wiring lines and so as to fill the gaps between the wiring lines and between the sidewalls and the wiring lines disposed adjacent to the sidewalls. <P>COPYRIGHT: (C)2012,JPO&INPIT |
