| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method which allow the effective execution of plasma processing by hydrogen radicals effectively acting on a substrate to be processed, and the reduction in the damage to a dielectric window caused by hydrogen ions, and the damage to an RF coil owing to heat input from the plasma. <P>SOLUTION: The plasma processing apparatus carries out a process by generating hydrogen radicals by plasma excitation of a hydrogen-containing process gas, and letting the hydrogen radicals act on a substrate to be processed. The plasma processing apparatus comprises: an RF power source; an RF antenna including an antenna element arranged to have opposing opening ends and a middle part grounded, and to resonate in response to one half of the wavelength of an RF power from the RF power source; a plasma generation chamber; a plasma processing chamber; and a partition member separating the plasma generation chamber and the plasma processing chamber from each other. The partition member has a plurality of plate-like members spaced away from each other and aligned to coincide in position with each other in a plane perpendicular to the direction of the thickness thereof. The plate-like members are each made of an insulative material which allows no ultraviolet light to pass therethrough, and have a plurality of openings to pass the hydrogen radicals through. The plate-like members are arranged so that the openings of each plate-like member do not overlap with the openings of other plate-like member. <P>COPYRIGHT: (C)2012,JPO&INPIT |
