| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ultrahigh efficiency photoelectric conversion device in the form of excellent incident light confinement effect in which a larger output energy can be obtained per unit area of incident primary sunlight. <P>SOLUTION: An inside wall including a constriction forming part 9 using a silicon based material, and a scoop part 10 formed on the lower side of the constriction is provided for the incident direction of primary sunlight, and a photoelectric conversion region is provided in the form of a constriction. The effective surface area of photoelectric conversion per unit area of incident primary sunlight is set larger, the optical path length is set longer, and the incident light is subjected to photoelectric conversion in the form of reducing the light being returned to the incident direction of primary sunlight. <P>COPYRIGHT: (C)2012,JPO&INPIT |
