METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFER, METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR ELEMENT, AND SILICON CARBIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To specify a region where the density of penetration spiral dislocation is reduced.

SOLUTION: This method for producing a silicon carbide single crystal includes specifying the part, where the density of penetration spiral dislocation is reduced, as a part (a region where the density of defects penetrating in the c-axis direction is reduced) x1, where penetration spiral dislocations 4 do not penetrate in the c-axis direction through the upper side of stripe 2, by structurally converting the penetration spiral dislocations 4 penetrating the inclined surface 2a of the stripe 2 having a larger inclination angle than the basal surface (0001) into defects 4a in the basal surface, and propagating the defects 4a in the same direction as that of the penetration spiral dislocations between the inclined surfaces 2a.

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