发明名称 SEMICONDUCTOR LASER
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor laser which stabilizes emission beam shapes. <P>SOLUTION: A semiconductor laser has a Distributed Bragg Reflector (DBR) region 11 where diffraction gratings 10 are provided and a Fabry-Perot (FP) region 12 where no diffraction grating 10 is provided. An optical waveguide part 14 is disposed between the DBR region 11 and an emission end surface 13. The length of the optical waveguide part 14 is longer than or equal to the length of the DBR region 11 in the resonator length direction. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012156378(A) 申请公布日期 2012.08.16
申请号 JP20110015414 申请日期 2011.01.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIGIHARA KIMIO;MARUYAMA TAKUTO;ONO AKIHITO
分类号 H01S5/125 主分类号 H01S5/125
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