| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of exerting an excellent crack stop function and an excellent moisture permeation prevention function by a short chip-ring width. <P>SOLUTION: A semiconductor device comprises: a substrate; a first wiring layer 3 that is formed on the substrate and includes first dummy annular wiring 3A annularly formed along the outer periphery of the substrate; a second wiring layer 5 that is formed on the first wiring layer and includes second dummy annular wiring 5A annularly formed along the outer periphery of the substrate; and a plurality of via plugs 4 formed between the first wiring layer and the second wiring layer. The plurality of via plugs 4 are formed between the first dummy annular wiring 3A and the second dummy annular wiring 5A. Each via plug 4 has an annular planar shape, and includes a plurality of annular via plugs 4A connected to each other so as to extend along the outer periphery of the substrate and external via plugs 4C arranged near recesses of the annular via plugs existing near the portions in which the annular via plugs are connected to each other so as to face the recesses in the exterior of the annular via plugs 4A. <P>COPYRIGHT: (C)2012,JPO&INPIT |
