发明名称 |
BACK SIDE ILLUMINATED IMAGE SENSOR WITH REDUCED SIDEWALL-INDUCED LEAKAGE |
摘要 |
Provided is an image sensor device. The image sensor device includes having a front side, a back side, and a sidewall connecting the front and back sides. The image sensor device includes a plurality of radiation-sensing regions disposed in the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers and extends beyond the sidewall of the substrate. The image sensor device includes a bonding pad that is spaced apart from the sidewall of the substrate. The bonding pad is electrically coupled to one of the interconnect layers of the interconnect structure.
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申请公布号 |
US2012205769(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201113028471 |
申请日期 |
2011.02.16 |
申请人 |
TSAI SHUANG-JI;YAUNG DUN-NIAN;LIU JEN-CHENG;WANG WEN-DE;TSENG HSIAO-HUI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI SHUANG-JI;YAUNG DUN-NIAN;LIU JEN-CHENG;WANG WEN-DE;TSENG HSIAO-HUI |
分类号 |
H01L31/02;H01L31/18 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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