发明名称 STRUCTURE AND METHOD FOR BURIED INDUCTORS FOR ULTRA-HIGH RESISTIVITY WAFERS FOR SOI/RF SIGE APPLICATIONS
摘要 A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high resistivity substrate and a buried inductor formed directly in the high resistivity substrate and devoid of an insulating layer therebetween.
申请公布号 US2012205741(A1) 申请公布日期 2012.08.16
申请号 US201213453426 申请日期 2012.04.23
申请人 LEVY MAX G.;VOLDMAN STEVEN H.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 LEVY MAX G.;VOLDMAN STEVEN H.
分类号 H01L27/07 主分类号 H01L27/07
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