SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

摘要

Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure (100) includes a trench gate structure (114), a body region (124) adjacent to the trench gate structure (114), a drain region (125) adjacent to the trench gate structure (1 14) underlying the body region (124), a source region (130) formed within the body region (124), and a lateral gate structure (1 18) overlying a first portion of the body region (124). The first portion of the body region (124) is disposed between the trench gate structure (114) and the source region (130). In one embodiment, a corner region (128) is formed within the body region (124) adjacent to the trench gate structure (114), such that the first portion of the body region (124) is disposed between the corner region and the source region (130), and a second portion of the body region (124) adjacent to the trench gate structure (114) is disposed between the corner region (128) and the drain region (125).