| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and apparatus for laser annealing with high energy efficiency. <P>SOLUTION: The method includes (a) preparing a SiC substrate doped with impurities by ion implantation, and (b) irradiating the SiC substrate with a laser beam having a wavelength in the range of 9-10.3 μm with low reflectance emitted by a carbon dioxide (CO2) laser oscillator, to activate the impurities added to the SiC substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
