| 发明名称 |
SEMICONDUCTOR DEVICE HAVING A METAL OXIDE CHANNEL |
| 摘要 |
A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
|
| 申请公布号 |
US2012208318(A1) |
申请公布日期 |
2012.08.16 |
| 申请号 |
US201213455321 |
申请日期 |
2012.04.25 |
| 申请人 |
HOFFMAN RANDY L.;HERMAN GREGORY S.;MARDILOVICH PETER P. |
发明人 |
HOFFMAN RANDY L.;HERMAN GREGORY S.;MARDILOVICH PETER P. |
| 分类号 |
H01L21/363;H01L29/786 |
主分类号 |
H01L21/363 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
