| 摘要 |
Microelectromechanical device comprising: a substrate (SS); a first layer (C1) of a first semiconducting material, deposited on a surface of said substrate; a second layer (C2) of a second piezoelectric semiconducting material different from said first semiconducting material, deposited on said first layer, said first and second layers forming a heterostructure able to confine a bidimensional gas of carriers (2DEG); at least one suspended element (ES), formed by prolongations of said layers extending beyond an edge (B) of said substrate; and a first (E1) and a second (E2) actuation electrode for establishing a potential difference between said bidimensional gas of carriers and said first layer in such a way as to form a piezoelectric actuation structure for said suspended element; characterized in that a dielectric layer (CD) is provided between said second actuation electrode and said second layer so as to prevent the passage of an electric current between them. |
