发明名称 GALLIUM NITRIDE SUBSTRATE
摘要 A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/2.
申请公布号 US2012208355(A1) 申请公布日期 2012.08.16
申请号 US201213455785 申请日期 2012.04.25
申请人 HACHIGO AKIHIRO;SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 HACHIGO AKIHIRO
分类号 H01L21/20 主分类号 H01L21/20
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