| 摘要 |
According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device having a stacked body of nitride semiconductor including a light emitting layer. The method can include selectively etching a substrate in an atmosphere containing chlorine and nitrogen, using a carbon-containing mask formed on a surface of the substrate translucent to light emission emitted from the light emitting layer. The method can include forming a nitride semiconductor layer on the etched surface of the substrate, the nitride semiconductor having a higher refractive index than the substrate. In addition, the method can include forming the stacked body including the nitride semiconductor layer on the substrate. |
