发明名称 |
METHODS OF MANUFACTURING A MASK BLANK SUBSTRATE, A MASK BLANK, A PHOTOMASK, AND A SEMICONDUCTOR DEVICE |
摘要 |
A before-chucking main surface shape is measured in an actual measurement region of a main surface of a substrate which has been precision-polished. Based on that shape and a shape of a mask stage (1), a simulated after-chucking main surface shape of the substrate, when a photomask (2) manufactured from the substrate is set in an exposure apparatus, is obtained. A selection is made of the substrate in which the after-chucking main surface shape has a flatness of a first threshold value or less in a virtual calculation region thereof. A calculation is performed and a selection is made of the substrate in which an after-correction main surface shape has a flatness of a second threshold value or less in the correction region. |
申请公布号 |
US2012208112(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201213399286 |
申请日期 |
2012.02.17 |
申请人 |
TANABE MASARU;HOYA CORPORATION |
发明人 |
TANABE MASARU |
分类号 |
G03F7/20;G03F1/50;G03F1/60;G03F1/68;G06F17/50;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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