LIGHT AND HEAT ENERGY CROSS-LINKABLE ORGANIC THIN FILM TRANSISTOR INSULATION LAYER MATERIAL

摘要

The problem addressed by the present invention is to provide an organic thin film transistor insulation layer material capable of producing an organic thin film transistor having low hysteresis and having a threshold voltage with a low absolute value. The problem is solved by an organic thin film transistor insulation layer material containing a polymer compound (A) which contains a (meth)acryloyl group and two or more of a first functional group, said first functional group being a functional group which generates a second functional group which reacts with active hydrogen through the action of electromagnetic radiation or heat.