发明名称 FORMATION OF SELF-ALIGNED VIA HOLES IN POLYMER THIN FILMS
摘要 <P>PROBLEM TO BE SOLVED: To realize formation of vias in an organic field effect transistor through low-cost and efficient processes. <P>SOLUTION: In forming vias 113 in a dielectric layer 106, posts based on a patterned conductive material are printed at each via location, the unpatterned dielectric layer 106 is deposited, and a second patterned conductive layer is deposited. The vias 113 are formed by flash annealing of the posts after the dielectric layer 106 is deposited and before the second conductive layer is deposited. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012156543(A) 申请公布日期 2012.08.16
申请号 JP20120089162 申请日期 2012.04.10
申请人 TAP DEVELOPMENT LTD LIABILITY CO 发明人 MOHAPATRA SIDDHARTH;DIMMLER KLAUS;JENKINS PATRICK H
分类号 H01L29/786;H01L21/288;H01L21/336;H01L21/768 主分类号 H01L29/786
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